IPC TM-650 2.4.22.2-1995 标准详情
- 标准号:IPC TM-650 2.4.22.2-1995
- 中文标题:衬底曲率:硅片与电介质沉积
- 英文标题:substrate curvature: silicon wafers with deposited dielectrics
- 标准类别:电子互联行业协会标准(美国印刷电路行业协会)
- 发布日期:1995-07-01
Recommended Standards and Publications are adopted by IPC without regard to whether theiradoption may involve patents on articles, materials, or processes. By such action, IPC does notassume any liability to any patent owner, nor do they assume any o
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